@article{Theron_Mokoena_Ndwandwe_2010, title={Solid-state compound phase formation of TiSi2 thin films under stress}, volume={105}, url={https://sajs.co.za/article/view/10227}, abstractNote={<p>Different stress situations were created on an Si(100) wafer by depositing either Si<sub>3</sub>N<sub>4</sub> or SiO<sub>2</sub> thin films on the back side. Si<sub>3</sub>N<sub>4</sub> has a different thermal expansion coefficient from that of SiO2. A thin Ti film was then deposited on the front side of the Si wafer. The structures were then annealed at various high temperatures for different periods of time. Real-time Rutherford backscattering spectrometry, as well as sample curvature measurements, were used to characterise the samples. Different reaction rates were found between Si<sub>3</sub>N<sub>4</sub>-deposited samples and SiO<sub>2</sub>-deposited samples.</p>}, number={11/12}, journal={South African Journal of Science}, author={Theron, C. and Mokoena, N. and Ndwandwe, O.}, year={2010}, month={Feb.}, pages={440–444} }